THE SMART TRICK OF GERMANIUM THAT NO ONE IS DISCUSSING

≤ 0.fifteen) is epitaxially developed on a SOI substrate. A thinner layer of Si is grown on this SiGe layer, after which the construction is cycled as a result of oxidizing and annealing phases. A result of the preferential oxidation of Si over Ge [sixty eight], the initial Si1–has enthusiastic lots of experiments to uncover alternate passivati